AustralieFrV1, Main, Exploration, bibRecord, 00AD56

Cathodoluminescence microanalysis of porous GaP and InP structures

Identifieur interne : 00AD56 ( Main/Exploration ); précédent : 00AD55; suivant : 00AD57

Cathodoluminescence microanalysis of porous GaP and InP structures

Auteurs : I. M. Tiginyanu [Moldavie] ; S. Langa [Moldavie, Allemagne] ; L. Sirbu [Moldavie] ; E. Monaico [Moldavie] ; M. A. Stevens-Kalceff [Australie] ; H. Föll [Allemagne]

Source :

EPJ. Applied physics : (Print) [ 1286-0042 ] ; 2004.

RBID : Pascal:05-0019855

Descripteurs français

Pascal (Inist)
- Semiconducteur poreux, Cathodoluminescence, Gallium phosphure, Indium phosphure, Composé binaire, Microanalyse, Microscopie électronique balayage, Gravure électrochimique, Sulfurique acide, Chlorique acide, Anodisation, Semiconducteur III-V, Etude expérimentale, GaP, Ga P, InP, In P, 7855M, 7860H.

English descriptors

KwdEn :
- Anodizing, Binary compounds, Cathodoluminescence, Chloric acid, Electrochemical etching, Experimental study, Gallium phosphides, III-V semiconductors, Indium phosphides, Microanalysis, Porous semiconductors, Scanning electron microscopy, Sulfuric acid.

Abstract

Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP and n-InP substrates in aqueous solutions of sulfuric and hydrochloric acids. Both the CL and morphology of porous layers were found to depend upon the anodic current density. At high current density (100 mA/cm²) anodization leads to the formation of so-called current-line oriented pores while at low current densities the pores grow along (111) crystallographic directions. The porosity relief was found to give rise to spatial modulation of the CL intensity. The composition microanalysis proved the stoichiometry of porous GaP and InP skeletons, although we found considerable traces of oxygen in porous GaP layers. Self-induced voltage oscillations giving rise to a synchronous modulation of the diameter of pores and CL intensity were evidenced.

Affiliations:

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Le document en format XML

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<term>Binary compounds</term>
<term>Cathodoluminescence</term>
<term>Chloric acid</term>
<term>Electrochemical etching</term>
<term>Experimental study</term>
<term>Gallium phosphides</term>
<term>III-V semiconductors</term>
<term>Indium phosphides</term>
<term>Microanalysis</term>
<term>Porous semiconductors</term>
<term>Scanning electron microscopy</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur poreux</term>
<term>Cathodoluminescence</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Composé binaire</term>
<term>Microanalyse</term>
<term>Microscopie électronique balayage</term>
<term>Gravure électrochimique</term>
<term>Sulfurique acide</term>
<term>Chlorique acide</term>
<term>Anodisation</term>
<term>Semiconducteur III-V</term>
<term>Etude expérimentale</term>
<term>GaP</term>
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<front><div type="abstract" xml:lang="en">Electron microscopy and cathodoluminescence (CL) microanalysis were used for a comparative study of porous layers fabricated by electrochemical etching of n-GaP and n-InP substrates in aqueous solutions of sulfuric and hydrochloric acids. Both the CL and morphology of porous layers were found to depend upon the anodic current density. At high current density (100 mA/cm<sup>2</sup>
) anodization leads to the formation of so-called current-line oriented pores while at low current densities the pores grow along (111) crystallographic directions. The porosity relief was found to give rise to spatial modulation of the CL intensity. The composition microanalysis proved the stoichiometry of porous GaP and InP skeletons, although we found considerable traces of oxygen in porous GaP layers. Self-induced voltage oscillations giving rise to a synchronous modulation of the diameter of pores and CL intensity were evidenced.</div>
</front>
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Cathodoluminescence microanalysis of porous GaP and InP structures

Cathodoluminescence microanalysis of porous GaP and InP structures

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

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